Fibics provides a wide range of services to our semiconductor clients that span from device modification to process quality verification and problem solving. Our services include the use of our FIB and SIMS systems, our decapsulator, and our on-site access to advanced analytical equipment, such as TEM, SEM, SIMS, EPMA and XPS.

If you are looking for a general introduction to FIB, please visit the Introduction: Focused Ion Beam Systems page of our website.

Please contact us to discuss your specific requirements.

State-of-the-art devices often require high aspect ratio FIB vias and tight geometry cuts. GAE permits us to obtain aspect ratios of 10:1 in cutting through dielectrics, and allows us to minimize the dose required when performing modifications in sensitive areas of your chip. Our FEI/Micrion 986 Vectra also incorporates special GAE features to permit "backside edits" on FlipChip devices.

From microns to millimeters in length, our tungsten metal deposition allows us to put metal lines right where you want them. We also manufacture tight geometry probe pads, and vias.

A calibrated, scanned, low energy electron gun permits charge neutralization on non-conductive samples; avoiding lightning strike damage thus becomes a straightforward procedure. For samples exhibiting charging, low energy electrons are constantly swept across the surface, neutralizing any charge induced by the positive ion beam and preventing potentially fatal damage.

Navigating to the area of interest is easy with our precision encoded stage. Once suitable alignment points on your device are registered with our software, we can navigate to within one micron of your desired location on our small chamber FIB systems, and with much greater accuracy on our laser encoded 8" wafer system.

When the one micron positional accuracy afforded by our encoded stage still isn't enough, we can register optical microscope images or scaled digital schematics with real device features to provide sub-micron positioning accuracy.